Research

Spintronics

Modern information processing technology uses conventional electronics, i.e. the charge of the electron is used to achieve functionalities in devices. Currently, electrical engineers and physicists are working together to develop the next generation of information processing technology. The new generation hopes to exploit the spin property of the electron to achieve new and improved functionalities, such as spin transistors or spinFETS, and Q-bits for quantum computing. This new technology, where both the charge and the spin of the electron are exploited, is called spintronics. Dilute Magnetic Semiconductors (DMS) are an important material in the field of spintronics. They have attracted a great deal of interest in recent years as they promise the possibility of combining the advantage of semiconductor bandgap engineering with controllable magnetic properties in a single semiconductor device.

I study the magneto-optical properties of DMS samples. I am currently building a lab to test the magnetization of these samples via the Magneto Optical Kerr Effect (MOKE).

Quantum Dots

A quantum dot is a nanoscale object that, similar to an atom, presents the unique ability to confine electrons in the three dimensions of space. For this reason, quantum dots are commonly known as “artificial atoms.” Such systems are interesting as much for the study of their fundamental physical properties as for their possible device applications.

In collaboration with Cal State LA and UCLA, I am currently studying the optical properties of InAs/GaAs quantum dots. In particular, we are investigating the effects of proton irradiation on the quantum dots through photoluminiscence experiments.

Publications

• V. Preisler, T. Grange, R. Ferreira, L.A. de Vaulchier, Y. Guldner, F.J. Teran, M. Potemski, and A. Lemaître

"Investigation of interband optical transitions by resonant magneto-photoluminescence in InAs/GaAs quantum dots", European Physical Journal B 67 (2009) 51

• V. Preisler, T. Grange, R. Ferreira, L.A. de Vaulchier,Y. Guldner, F.J. Teran, M. Potemski, and A. Lemaître

"Evidence for excitonic polarons in InAs/GaAs quantum dots", Phys. Rev. B 73 075320 (2006).

• V. Preisler, R. Ferreira, S. Hameau, L.A. de Vaulchier, Y. Guldner, M.L. Sadowski, and A. Lemaître

"Hole-LO phonon interaction in InAs/GaAs quantum dots", Phys. Rev. B 72 115309 (2005).

• B.L. Zink, V. Preisler, D.R. Queen, and F. Hellman

"Magnetic moments and interactions near the metal-insulator transition in amorphous magnetic semiconductors", Phys. Rev. B. 66 195208 (2002).

• V. Preisler, T. Grange, R. Ferreira, L.A. de Vaulchier,Y. Guldner, F.J. Teran, M. Potemski, and A. Lemaître

“Evidence for excitonic polarons in InAs/GaAs quantum dots”, Physica Status Solidi (c) 311 3881 (2006).

Invited Talks

• Department of Electrical Engineering UCLA, Visitor Seminar, October 2006.

“Magneto-Optical Spectroscopy of Quantum Dots”

• Science in High Magnetic Fields, Grenoble, France, June 2005.

“Magneto-Optical Properties of Semi-Conductor Quantum Dots”

• Journées d’Ecole Doctorale Physique, Paris, France, October 2005.

“Magnéto-spectroscopie dans des boîtes quantiques semi-conductrices”

Conferences

• International Conference on the Physics of Semiconductors, Rio de Janeiro, July 2008.

“Magnetic and Transport Properties of Mn-ion implanted Si”

• International Conference on the Physics of Semiconductors, Vienna, July 2006.

“Magneto-optical interband transitions in semiconductor quantum dots”

• Fourth International Conference on Semiconductor Quantum Dots, Chamonix, May 2006.

“Evidence for excitonic polarons in InAs/GaAs quantum dots”

• American Physical Society March Meeting, Los Angeles, March 2005.

“Hole-LO phonon interaction in InAs/GaAs quantum dots”

“Investigation of interband magneto-optical transitions in a quantum dot ensemble”

• Journées de la Matière Condensée, Nancy, France, September 2004.

“Interaction trou-phonon LO dans les boîtes quantiques InAs/GaAs”

 

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